High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs
نویسندگان
چکیده
The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), pMOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, such as the Non-local Empirical Pseudopotential method (bandstructure), Full-Band MonteCarlo Simulations (transport), 1-D Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quantum effects) simulations, were used in this study.
منابع مشابه
Germanium channel MOSFETs: Opportunities and challenges
Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons and 4x for holes) has prompted renewe...
متن کاملHigh Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
متن کاملModelling and simulation challenges for nanoscale MOSFETs in the ballistic limit
In this paper, we present the main issues and the modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is indeed possible to compute in an accurate way the density of states in the channel in the case of quantum confinement without solving the complete two-dimensional Schr€ odinger equation. We are developing modelling...
متن کاملCorrelated Flicker Noise and Hole Mobility Characteristics of (110)/〈110〉 Uniaxially Strained SiGe FINFETs
Hole mobility and flicker noise characteristics of uniaxially strained (110)/〈110〉 Si0.75Ge0.25 pFINFETs (SSGOI0.25) are investigated in this letter. Equivalent gate referred flicker noise in SSGOI0.25 is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in SSGOI0.25 and in Si pFIN...
متن کاملUnderstanding the improved performance of strained Si/Si1−xGex channel MOSFETs
We have studied in depth the performance of superficial strained Si/Si1−x Gex channel MOSFETs. To do so, we developed a two-dimensional drift-diffusion simulator including inversion layer quantization and low-field mobility curves obtained by means of a Monte Carlo simulator. We have reproduced experimental results. The dependences of the performance enhancement obtained in these devices on the...
متن کامل